BFR90 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFR90
FUNCTIONAL
Symbol
Test Conditions
NF
GNF
|S₂₁|²
MSG
G
U max
Noise Figure
(IC = 2.0 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
(IC = 2.0 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
Power Gain at Optimum Noise Figure
(IC = 2.0 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
(IC = 2.0 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
Insertion Gain
(IC = 14 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
(IC = 14 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
Maximum Stable Gain
(IC = 14 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
(IC = 14 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
Maximum Unilateral Gain (1)
(IC = 14 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
(IC = 14 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
Value
Min.
Typ.
Max.
Unit
-
2.4
-
dB
-
3.0
-
-
15
-
dB
-
10
-
15
16
-
dB
11
-
20
-
dB
15
-
18
-
dB
12.5
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 14 mA
f
(MHz)
100
200
300
500
700
800
1000
S11
|S11|
0.382
0.282
0.217
0.162
0.140
0.135
0.124
∠φ
-41
-77
-101
-131
-151
-159
-176
S21
|S21|
21.21
14.85
10.71
6.78
4.98
4.42
3.59
∠φ
141
116
104
91
83
80
74
S12
|S12|
0.016
0.028
0.039
0.061
0.082
0.093
0.117
∠φ
79
74
74
76
76
76
75
S22
|S22|
0.718
0.662
0.599
0.558
0.55
0.552
0.553
∠φ
-9
-18
-20
-24
-28
-29
-33
MSC1307.PDF 10-25-99