BFR90 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
Test Conditions
BVCEO
BVCB0
BVEBO
ICBO
(on)
HFE
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 10 Vdc, VBE = 0 Vdc)
DC Current Gain
(IC = 14 mAdc, VCE = 10 Vdc)
DYNAMIC
Symbol
Test Conditions
Ftau
CCB
Current-Gain – Bandwidth Product
(IC = 14 mA, VCE = 10 Vdc, f = 0.5 GHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
BFR90
Value
Min.
Typ.
Max.
Unit
15
-
-
Vdc
20
-
-
Vdc
3.0
-
-
Vdc
-
-
50
nA
25
-
250
-
Min.
-
-
Value
Typ.
5.0
0.5
Max.
-
1.0
Unit
GHz
pF
MSC1307.PDF 10-25-99