BFR90 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

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RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA
• Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz
• High Power Gain – Gmax = 18dB (typ) @ f = 0.5 GHz
BFR90
Macro T
(STYLE #2)
DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in
applications requiring fast switching times.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
Thermal Data
P
D
Total Device Dissipation @ TA = 60ºC
Derate above 60ºC
Value
15
20
3.0
30
180
2.0
Unit
Vdc
Vdc
Vdc
mA
mWatts
mW/ ºC
MSC1307.PDF 10-25-99