ARF477FL Datasheet, PDF (3/4 Pages) Microsemi Corporation – RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR

ARF477FL
0.25
0.20
D = 0.9
0.15
0.7
0.5
0.10
Note:
0.3
0.05
0.1
t1
t2
Duty Factor D = ^t1/t2
0
10^-5
0.05
SINGLE PULSE
10^-4
10^-3
Peak T_J = P_DM x Z_θJC + TC
10^-2
10 ^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 5a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Dissipated Power
(Watts)
T_J (˚C)
T_C (˚C)
.0915
.0111F
.108
.133F
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Figure 5b, TRANSIENT THERMAL IMPEDANCE MODEL
Freq. (MHz)
40
60
80
Z_in (Ω)
1.5 - j 10
1.9 - j 1.3
2.2 - j 0.82
Z_OUT (Ω)
24 - j 37
13 - j 29
7.9 - j 24
Z_IN - Gate shunted with 100Ω
I_dq = 0
Z_OL - Conjugate of optimum load for 400 Watts output at V_dd=125V