ARF477FL Datasheet, PDF (2/4 Pages) Microsemi Corporation – RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR

DYNAMIC CHARACTERISTICS (per section)
Symbol
C_ISS
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V_GS = 0V
V_DS = 50V
f = 1MHz
V_GS = 15V
V_DD = 250V
I_D = I_D[Cont.] @ 25°C
R_G = 1.6 W
ARF477FL
Min
Typ
Max Unit
1890 2100
350
390
pF
75
90
7
6
nS
20
4.0
7
Functional Characteristics
Symbol
G_PS
Characteristic
Common Source Amplifier Power Gain
η
Drain Efficiency
Ψ
Electrical Ruggedness VSWR 10:1
1. Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%.
Test Conditions
f = 27MHz
I_dq = 0mA V_DD = 125V
P_OUT = 300W
Min
Typ
Max
Unit
14
16
dB
50
55
%
No Degradation in Output Power
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
25
V_GS=15 & 10V_→
9V
20
8V
15
7V
10
6.5V
6V
5
5.5V
5V
0
4.5V
0
5
10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics
16
T_J = -55°C →
V_DS> I_D (ON) x R_DS (ON)MAX.
12
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
8
4
T_J = +125°C → _← T_J = -55°C
T_J = +25°C →
0
2
4
6
8
10
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
5000
C_iss
1000
500
C_oss
C_rss
100
50
10
.1
.5 1
5 10
50 150
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
56.00
10.00
OPERATION HERE
LIMITED BY R_DS (ON)
1.00
T_C =+25°C
T_J =+150°C
SINGLE PULSE
0.10 ₁
5 10
50 100
500
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area