ARF475FL_10 Datasheet, PDF (3/4 Pages) Microsemi Corporation – RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR

ARF475FL
0.18
0.16
D = 0.9
0.14
0.12
0.7
0.10
0.5
0.08
Note:
0.06
0.3
t1
0.04
0.02
0.1
0.05
0
10^-5
10^-4
SINGLE PULSE
10^-3
10^-2
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 5a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Dissipated Power ^TJ ^{( C)}
(Watts)
0.0755
T_C ( C)
0.0893
0.0135F
0.161F
Z_EXT are the external thermal
impedances: Case to sink, sink to
ambient, etc. Set to zero when modeling
only the case to junction.
Figure 5b, TRANSIENT THERMAL IMPEDANCE MODEL
200
100
OPERATION HERE
LIMITED BY R_DS (ON)
DC Line
10
10µs
100µs
1ms
10ms
1
100ms
T_C =+25°C
T_J =+175°C
SINGLE PULSE
0.1
1
10
100
800
Fig^Vu^Dr^Se^,
DRAIN-TO-SOURCE
6, Typical Maximum
VOLTAGE (VOLTS)
Safe Operating Area
Table 1 - Typical Series Equivalent Large Signal Input - Output Impedance
Freq. (MHz)
30
60
90
120
150
Zin (Ω) gate to gate
5.2 -j10
1.37 -j5.2
.53 -j2.6
.25 -j1.0
.25 +j0.2
Z_OL (Ω) drain - drain
41 -j20
26 -j25
16 -j23
10 -j20
6.7 -j17
Zin - Gate -gate shunted with 25Ω I_DQ = 15mA each side
Z_OL - Conjugate of optimum load for 600 Watts peak output at Vdd = 150V
25% duty cycle and PW = 5ms