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| ARF475FL_10 Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR | |||
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RF POWER MOSFET
N - CHANNEL PUSH - PULL PAIR
ARF475FL Common Source
Push-Pull Pair
D
G
S
S
S
S
G
D
165V 450W 150MHz
The ARF475FL is a matched pair of RF power transistors in a common source conï¬guration. It is designed for high
voltage push-pull or parallel operation in narrow band ISM and MRI power ampliï¬ers up to 150 MHz.
⢠Speciï¬ed 150 Volt, 128 MHz Characteristics:
⢠High Performance Push-Pull RF Package.
â¢
Output Power = 900 Watts Peak
â¢
Gain = 15dB (Class AB)
â¢
Efï¬ciency = 50% min
⢠High Voltage Breakdown and Large SOA
for Superior Ruggedness.
⢠Low Thermal Resistance.
⢠RoHS Compliant *
*Pb Free Terminal Finish.
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise speciï¬ed.
ARF475FL
UNIT
VDSS
VDGO
ID
VGS
PD
TJ,TSTG
TL
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
(each device)
Total Device Dissipation @ TC = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
500
500
10
±30
910
-55 to 175
300
Volts
Amps
Volts
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS (each device)
Symbol Characteristic / Test Conditions
BVDSS
VDS(ON)
IDSS
IGSS
gfs
gfs1/ gfs2
VGS(TH)
DVGS(TH)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA)
On State Drain Voltage 1 (ID(ON) = 5A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Forward Transconductance (VDS = 15V, ID = 5A)
Forward Transconductance Match Ratio (VDS = 15V, ID = 5A)
Gate Threshold Voltage (VDS = VGS, ID = 200mA)
Gate Threshold Voltage Match (VDS = VGS, ID = 200mA)
THERMAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJHS
Junction to Case
Junction to Sink (Use High Efï¬ciency Thermal Grease and Planar Heat Sink Surface.)
MIN TYP MAX UNIT
500
2.9
Volts
4
100
μA
500
±100 nA
3
3.6
mhos
0.9
1.1
2
3.3
4
Volts
0.2
MIN TYP MAX UNIT
0.15 0.165
°C/W
0.30 0.33
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
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