ARF475FL_10 Datasheet, PDF (2/4 Pages) Microsemi Corporation – RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR

DYNAMIC CHARACTERISTICS (per section)
Symbol Characteristic
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V_GS = 0V
V_DS = 50V
f = 1MHz
V_GS = 15V
V_DD = 250V
I_D = I_D[Cont.] @ 25°C
R_G = 1.6 W
ARF475FL
MIN TYP MAX UNIT
780 830
125 130 pF
7
9
5.1
10
4.1
8
ns
12
18
4.0
7
FUNCTIONAL CHARACTERISTICS (Push-Pull Configuration)
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
G_PS Common Source Amplifier Power Gain
η
Drain Efficiency
ψ
Electrical Ruggedness VSWR 5:1
f = 128 MHz
Idq = 15mA V_DD = 150V
P_out = 900W
PW = 3ms
10% duty cycle
14
16
dB
50
55
%
No Degradation in Output Power
1 _{Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%.}
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
Per transistor section unless otherwise specified.
30
3000
25
12V
1000
C_iss
11V
500
10V
20
C_oss
9V
100
15
50
8V
10
C_rss
10
7V
5
0
0
5
10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics
1
.1
1
10
100 200
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
30
V_DS> I_D (ON) x R_DS (ON)MAX.
250μSEC. PULSE TEST
25
@ <0.5 % DUTY CYCLE
T_J = -55°C
20
T_J = +25°C
15
10
5
T_J = +125°C
T_J = -55°C
0
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
Figure 4, Typical Threshold Voltage vs Temperature