APT30GS60KR Datasheet, PDF (3/7 Pages) Microsemi Corporation – Thunderbolt High Speed NPT IGBT

TYPICAL PERFORMANCE CURVES
120
V_GE = 15V
100
80
T_J = 25°C
60
40
T_J = 125°C
20
T_J = 150°C
0
01 2 3 4 5 6 7 8
V_CE(ON), COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics
120
100
250µs PULSE
TEST<0.5 % DUTY
CYCLE
T_J = 125°C
80
T_J = 25°C
T_J = -55°C
60
40
20
0
0 2 4 6 8 10 12 14
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
5
4
I_C = 60A
3
I_C = 30A
I_C = 15A
2
1
V_GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
0 25 50 75 100 125 150
T_J, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Junction Temperature
2000
1000
C_ies
100
C_oes
C_res
10
0 100 200 300 400 500 600
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 7, Capacitance vs Collector-To-Emitter Voltage
120
T_J = 125°C
100
APT30GS60KR(G)
V_GE = 13 & 15V
12V
80
11V
60
10V
40
9V
8V
20
6V
0
0
5
10 15 20 25 30
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics
6
I_C = 60A
T_J = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
5
4
I_C = 30A
3
2
I_C = 15A
1
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 4, On State Voltage vs Gate-to- Emitter Voltage
16
14
V_CE = 120V
12
V_CE = 300V
10
8
V_CE = 480V
6
4
2
0
0 20 40 60 80 100 120 140 160
GATE CHARGE (nC)
FIGURE 6, Gate Charge
60
50
40
30
20
10
0
25
50
75
100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature