APT30GS60KR Datasheet, PDF (1/7 Pages) Microsemi Corporation – Thunderbolt High Speed NPT IGBT

APT30GS60KR(G)
600V, 30A, V_CE(ON) = 2.8V Typical
Thunderbolt^® High Speed NPT IGBT
The Thunderbolt HS^™ series is based on thin wafer non-punch through (NPT) technology similar to
the Thunderbolt^® series, but trades higher V_CE(ON) for significantly lower turn-on energy E_off. The low
switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET
performance but lower cost.
An extremely tight parameter distribution combined with a positive V_CE(ON) temperature coefficient
make it easy to parallel Thunderbolts HS^™ IGBT's. Controlled slew rates result in very good noise
and oscillation immunity and low EMI. The short circuit duration rating of 10µs make these IGBT's
suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy
ruggedness.
Features
Typical Applications
APT30GS60KR(G)
• Fast Switching with low EMI
• ZVS Phase Shifted and other Full Bridge
• Very Low E_OFF for Maximum Efficiency
• Short circuit rated
• Low Gate Charge
• Tight parameter distribution
• Easy paralleling
• RoHS Compliant
• Half Bridge
• High Power PFC Boost
• Welding
• Induction heating
• High Frequency SMPS
C
G
E
Absolute Maximum Ratings
Symbol Parameter
I _C1
Continuous Collector Current T_C = @ 25°C
I _C2
Continuous Collector Current T_C = @ 100°C
I_{CM Pulsed Collector Current} ¹
V_{GE Gate-Emitter Voltage}
SSOA Switching Safe Operating Area
E_{AS Single Pulse Avalanche Energy} ²
t_SC
Short Circut Withstand Time ³
Rating
Unit
54
30
A
113
±30V
V
113
165
mJ
10
µs
Thermal and Mechanical Characteristics
Symbol Parameter
P_D
R_θJC
Total Power Dissipation T_C = @ 25°C
Junction to Case Thermal Resistance
R_{θCS Case to Sink Thermal Resistance, Flat Greased Surface}
T_J, T_STG Operating and Storage Junction Temperature Range
T_L
Soldering Temperature for 10 Seconds (1.6mm from case)
W_{T Package Weight}
Torque Mounting Torque, 6-32 M3 Screw
Min
Typ Max Unit
-
-
250
W
-
-
0.50
°C/W
-
0.11
-
-55
-
150
°C
-
-
300
-
0.22
-
oz
-
5.9
-
g
-
-
10 in·lbf
-
-
1.1 N·m
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed.
Microsemi Website - http://www.microsemi.com