APT30GS60KR Datasheet, PDF(2/7 Page) Microsemi Corporation – Thunderbolt High Speed NPT IGBT

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APT30GS60KR Datasheet, PDF (2/7 Pages) Microsemi Corporation – Thunderbolt High Speed NPT IGBT

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Static Characteristics

TJ = 25Â°C unless otherwise speciï¬ed

Symbol Parameter

Test Conditions

Min

VBR(CES) Collector-Emitter Breakdown Voltage

VGE = 0V, IC = 250ÂµA

600

VBR(ECS) Emitter-Collector Breakdown Voltage

VGE = 0V, IC = 1A

-

âVBR(CES)/âTJ Breakdown Voltage Temperature Coeff

Reference to 25Â°C, IC = 250ÂµA

-

VCE(ON) Collector-Emitter On Voltage 4

VGE = 15V

IC = 30A

TJ = 25Â°C

-

TJ = 125Â°C -

VGE(th)

Gate-Emitter Threshold Voltage

âVGE(th)/âTJ Threshold Voltage Temp Coeff

3

VGE = VCE, IC = 1mA

-

ICES

Zero Gate Voltage Collector Current

VCE = 600V,

VGE = 0V

TJ = 25Â°C

-

TJ = 125Â°C -

IGES

Gate-Emitter Leakage Current

VGE = Â±20V

-

APT30GS60KR(G)

Typ Max Unit

-

-

V

25

-

0.60

-

V/Â°C

2.8 3.15

3.25

-

V

4

5

6.7

-

mV/Â°C

-

50

ÂµA

-

1000

-

Â±100 nA

Dynamic Characteristics

Symbols Parameter

TJ = 25Â°C unless otherwise speciï¬ed

Test Conditions

gfs

Cies

Coes

Cres

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VCE = 50V, IC = 30A

VGE = 0V, VCE = 25V

f = 1MHz

Co(cr)

Co(er)

Reverse Transfer Capacitance

Charge Related 5

Reverse Transfer Capacitance

Current Related 6

VGE = 0V

VCE = 0 to 400V

Qg

Total Gate Charge

Qge

Gate-Emitter Charge

Ggc

Gate-Collector Charge

VGE = 0 to 15V

IC = 30A, VCE = 300V

td(on)

tr

td(off)

tf

Eon1

Eon2

Eoff

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Switching Energy 8

Turn-On Switching Energy 9

Turn-Off Switching Energy 10

Inductive Switching IGBT and

Diode:

TJ = 25Â°C, VCC = 400V,

RG

=

IC

9.1â¦

= 30A

7, VGG

=

15V

td(on)

tr

td(off)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Inductive Switching IGBT and

Diode:

tf

Eon1

Eon2

Eoff

Fall Time

Turn-On Switching Energy 8

Turn-On Switching Energy 9

Turn-Off Switching Energy 10

TJ = 125Â°C, VCC = 400V,

RG

=

IC

9.1â¦

= 30A

7, VGG

=

15V

Min Typ Max

-

18

-

-

1600

-

-

140

-

-

90

-

-

130

-

95

-

145

-

-

12

-

-

65

-

-

16

-

-

29

-

-

360

-

-

27

-

-

TBD

-

-

800

-

-

570

-

-

16

-

-

29

-

-

390

-

-

22

-

-

TBD

-

-

1185

-

-

695

-

Unit

S

pF

nC

ns

mJ

ns

mJ

▷