APT2X101S20J Datasheet, PDF (3/4 Pages) Microsemi Corporation – HIGH VOLTAGE SCHOTTKY DIODE

TYPICAL PERFORMANCE CURVES
360
300
240
180
120
T_J = 125°C
T_J = 25°C
60 _{TJ = 150°C}
T_J = -55°C
0
0
0.5
1.0
1.5
V_F, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
2500
T_J = 125°C
V_R = 133V
2000
1500
130A
100A
1000
50A
500
0
0
200
400
600
800
-di_F /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
1.2
tQ_{r r} ^rr
1.0
t_rr
0.8
I_RRM
0.6
Q_rr
0.4
0.2
0.0
0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
6000
5000
4000
3000
2000
1000
0
1
10
100 200
V_R, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
APT2X101S20J
120
100A 130A
50A
100
80
60
40
20
T_J = 125°C
V_R = 133V
0
0
200
400
600
800
-di_F /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
40
T_J = 125°C
V_R = 133V
35
130A
30
25
20
15
100A
10
50A
5
0
0
200
400
600
800
-di_F /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
250
Duty cycle = 0.5
T_J = 150°C
200
150
100
50
0
25
50
75
100 125 150
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
200
100
50
10
5
1
1
10
100
1000 2500
Time in Avalanche (µs)
Figure 9. Single Pulse UIS SOA