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APT2X101S20J Datasheet, PDF (1/4 Pages) Microsemi Corporation – HIGH VOLTAGE SCHOTTKY DIODE
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APT2X101S20J
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ISOTOPfi
"UL Recognized"
file # E145592
APT2X101S20J 200V 120A
DUAL DIE ISOTOP® PACKAGE
HIGH VOLTAGE SCHOTTKY DIODE
PRODUCT APPLICATIONS
• Rectifiers in Switchmode Power
Supplies (SMPS)
• Free Wheeling Diode in
Low Voltage Converters
PRODUCT FEATURES
• Ultrafast Recovery Times
• Soft Recovery Characteristics
• Popular SOT-227 Package
• Rugged -
Avalanche Energy Rated
• Low Forward Voltage
• High Blocking Voltage
• Low Leakage Current
PRODUCT BENEFITS
• Low Losses
• Low Noise Switching
• Cooler Operation
• Higher Reliability Systems
• Increased System Power
Density
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Characteristic / Test Conditions
APT2X101S20J
UNIT
VR
VRRM
VRWM
IF(AV)
IF(RMS)
IFSM
TJ,TSTG
EAVL
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (TC = 105°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
Operating and StorageTemperature Range
Avalanche Energy (2A, 50mH)
200
120
213
1000
-55 to 150
100
Volts
Amps
°C
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
VF
Forward Voltage
IRM Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
IF = 100A
IF = 200A
IF = 100A, TJ = 125°C
VR = 200V
VR = 200V, TJ = 125°C
MIN TYP MAX UNIT
.89 .95
1.06
Volts
.76
2
mA
40
470
pF
Microsemi Website - http://www.microsemi.com