APT2X101S20J Datasheet, PDF (2/4 Pages) Microsemi Corporation – HIGH VOLTAGE SCHOTTKY DIODE

DYNAMIC CHARACTERISTICS
Symbol Characteristic
t_rr
Q_rr
I_RRM
t_rr
Q_rr
I_RRM
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Test Conditions
MIN
-
I_F = 100A, di_F/dt = -200A/µs
V_R = 133V, T_C = 25°C
-
-
-
I_F = 100A, di_F/dt = -200A/µs
V_R = 133V, T_C = 125°C
-
-
-
I_F = 100A, di_F/dt = -700A/µs
V_R = 133V, T_C = 125°C
-
-
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
R_θJC
V_Isolation
Junction-to-Case Thermal Resistance
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
MIN
2500
W_T
Package Weight
Torque Maximum Terminal & Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT2X101S20J
TYP MAX UNIT
70
ns
240
nC
6
-
Amps
110
ns
690
nC
11
-
Amps
95
ns
1750
nC
32
Amps
TYP
1.03
29.2
MAX
.33
10
1.1
UNIT
°C/W
Volts
oz
g
lb•in
N•m
0.35
0.30
D = 0.9
0.25
0.7
0.20
0.5
0.15
Note:
0.10
0.05
0
10^-5
0.3
t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = ^t1/t2
Peak TJ = PDM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
10
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Dissipated Power
(Watts)
T_J ( C)
T_C ( C)
0.0673
0.188
0.0743
0.0182
0.361
5.17
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL