2N3810_11 Datasheet, PDF (3/5 Pages) Microsemi Corporation – PNP SILICON DUAL TRANSISTOR

6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: [phone] Fax: [phone]
DYNAMIC CHARACTERISTICS (cont.)
Parameters / Test Conditions
Output Capacitance
V_CB = 5.0Vdc, I_E = 0, 100kHz ≤ f ≤ 1.0MHz
Input Capacitance
V_EB = 5.0Vdc, I_C = 0, 100kHz ≤ f ≤ 1.0MHz
Noise Figure
I_C = 100μAdc, V_CE = 10Vdc, f = 100Hz, R_G = 3.0kΩ
I_C = 100μAdc, V_CE = 10Vdc, f = 1.0kHz, R_G = 3.0kΩ
I_C = 100μAdc, V_CE = 10Vdc, f = 10kHz, R_G = 3.0kΩ
I_C = 100μAdc, V_CE = 10Vdc, f = 10Hz to 15.7kHz, R_G = 3.0kΩ
Symbol
C_obo
C_Ibo
2N3810, L, U
F₁
2N3810, L, U
F₂
2N3810, L, U
F₃
2N3810, L, U
F₄
I_C = 100μAdc, V_CE = 10Vdc, f = 100Hz, R_G = 3.0kΩ
2N3811, L, U
F₁
I_C = 100μAdc, V_CE = 10Vdc, f = 1.0kHz, R_G = 3.0kΩ
2N3811, L, U
F₂
I_C = 100μAdc, V_CE = 10Vdc, f = 10kHz, R_G = 3.0kΩ
2N3811, L, U
F₃
I_C = 100μAdc, V_CE = 10Vdc, f = 10Hz to 15.7kHz, R_G = 3.0kΩ 2N3811, L, U
F₄
Min.
Max.
Unit
5.0
pF
8.0
pF
7.0
3.0
dB
2.5
3.5
4.0
1.5
2.0
dB
2.5
T4-LDS-0118 Rev. 2 (110152)
Page 3 of 5