2N3810_11 Datasheet, PDF (1/5 Pages) Microsemi Corporation – PNP SILICON DUAL TRANSISTOR

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: [phone] Fax: [phone]
PNP SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500 /336
DEVICES
2N3810
2N3810L
2N3810U
2N3811
2N3811L
2N3811U
LEVELS
JAN
JANTX
JANTV
JANS
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T_A = +25°C
V_CEO
V_CBO
V_EBO
I_C
P_T
60
Vdc
60
Vdc
5.0
Vdc
50
mAdc
One
Both
Section ¹ Sections ²
200
350
mW
Operating & Storage Junction Temperature Range T_J, T_stg
-65 to +200
°C
NOTES:
1. Derate linearly 1.143mW/°C for T_A > +25°C (one section)
2. Derate linearly 2.000mW/°C for T_A > +25°C (both sections)
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I_C = 100μAdc
Symbol Min.
Max.
V_(BR)CEO
60
Collector-Base Cutoff Current
V_CB = 50Vdc
V_CB = 60Vdc
Emitter-Base Cutoff Current
V_EB = 4.0Vdc
V_EB = 5.0Vdc
I_CBO
10
10
I_EBO
10
10
Unit
Vdc
ηAdc
μAdc
ηAdc
μAdc
TO-78
U - Package
T4-LDS-0118 Rev. 2 (110152)
Page 1 of 5