 English |
|
|
|
|
|
|
|
| 2N3810_11 Datasheet, PDF (2/5 Pages) Microsemi Corporation – PNP SILICON DUAL TRANSISTOR | |||
| |||
| ◁ |
6 Lake Street, Lawrence, MA 01841
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS (conât)
Parameters / Test Conditions
ON CHARACTERTICS
Forward-Current Transfer Ratio
IC = 10μAdc, VCE = 5.0Vdc
IC = 100μAdc, VCE = 5.0Vdc
IC = 1.0mAdc, VCE = 5.0Vdc
IC = 10mAdc, VCE = 5.0Vdc
IC = 1.0μAdc, VCE = 5.0Vdc
IC = 10μAdc, VCE = 5.0Vdc
IC = 100μAdc, VCE = 5.0Vdc
IC = 1.0mAdc, VCE = 5.0Vdc
IC = 10mAdc, VCE = 5.0Vdc
Collector-Emitter Saturation Voltage
IC = 100μAdc, IB = 10μAdc
IC = 1.0mAdc, IB = 100μAdc
Base-Emitter Saturation Voltage
IC = 100μAdc, IB = 10μAdc
IC = 1.0mAdc, IB = 100μAdc
Base-Emitter Non-Saturation Voltage
VCE = 5.0Adc, IC = 100μAdc
Symbol
2N3810, 2N3810L , 2N3810U
hFE
2N3811, 2N3811L, 2N3811U
hFE
VCE(sat)
VBE(sat)
VBE
Min.
100
150
150
125
75
225
300
300
250
Max.
Unit
450
450
900
900
0.2
0.25
Vdc
0.7
0.8
Vdc
0.7
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
IC = 500μAdc, VCE = 5.0Vdc, f = 30MHz
IC = 1.0mAdc, VCE = 5.0Vdc, f = 100MHz
|hfe|
1.0
1.0
Small-Signal Short Circuit Forward Current Transfer Ratio
IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz
2N3810, 2N3810L , 2N3810U
hfe
150
2N3811, 2N3811L , 2N3811U
300
Small-Signal Short Circuit Input Impedance
IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz
2N3810, 2N3810L , 2N3810U
hje
3.0
2N3811, 2N3811L , 2N3811U
3.0
Small-Signal Short Circuit Output Admittance
IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz
2N3810, 2N3810L , 2N3810U
hoe
5.0
2N3811, 2N3811L , 2N3811U
5.0
600
900
30
kΩ
40
60
μmhos
T4-LDS-0118 Rev. 2 (110152)
Page 2 of 5
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese