JANS2N5339 Datasheet, PDF (2/4 Pages) Microsemi Corporation – NPN POWER SILICON SWITCHING TRANSISTOR

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: [phone] Fax: [phone]
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions
ON CHARACTERISTICS ⁽³⁾
Forward-Current Transfer Ratio
I_C = 0.5Adc, V_CE = 2.0Vdc
I_C = 2.0Adc, V_CE = 2.0Vdc
I_C = 5.0Adc, V_CE = 2.0Vdc
Symbol
Min.
h_FE
60
60
40
Collector-Emitter Saturation Voltage
I_C = 2.0Adc, I_B = 0.2Adc
I_C = 5.0Adc, I_B = 0.5Adc
V_CE(sat)
Base-Emitter Saturation Voltage
I_C = 2.0Adc, I_B = 0.2Adc
I_C = 5.0Adc, I_B = 0.5Adc
V_BE(sat)
Max.
Unit
240
0.7
Vdc
1.2
1.2
Vdc
1.8
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I_C = 0.5Adc, V_CE = 10Vdc, f = 10MHz
Output Capacitance
V_CB = 10Vdc, I_E = 0, 100kHz ≤ f ≤ 1.0MHz
Input Capacitance
V_BE = 2.0Vdc, I_C = 0, 100kHz ≤ f ≤ 1.0MHz
Symbol
|h_fe|
C_obo
C_ibo
Min.
3.0
Max.
Unit
15
250
pF
1,000
pF
SAFE OPERATING AREA
DC Tests
T_C = +25°C, 1 Cycle, t ≥ 0.5s
Test 1
V_CE = 2.0Vdc, I_C = 5.0Adc
Test 2
V_CE = 5.0Vdc, I_C = 2.0Adc
Test 3
V_CE = 90Vdc, I_C = 55mAdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%
T4-LDS-0011 Rev. 3 (101764)
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