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| JANS2N5339 Datasheet, PDF (1/4 Pages) Microsemi Corporation – NPN POWER SILICON SWITCHING TRANSISTOR | |||
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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/560
DEVICES
2N5339 2N5339U3
LEVELS
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +25°C (1)
@ TC = +25°C (2)
@ TC = +25°C (3) â U3
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to Air
NOTES:
1) Derate linearly 5.71mW/°C for TA > 25°C
2) Derate linearly 100mW/°C for TC > 25°C
3) Derate linearly 434mW/°C for TC > 25°C â U3
VCEO
VCBO
VEBO
IB
IC
PT
Top , Tstg
RθJA
100
100
6.0
1.0
5.0
1.0
17.5
75
-65 to +200
175
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 50mAdc
Collector-Emitter Cutoff Current
VCE = 100Vdc
Collector-Emitter Cutoff Current
VCE = 90Vdc, VBE = 1.5Vdc
Collector-Base Cutoff Current
VCB = 100Vdc
Emitter-Base Cutoff Current
VEB = 6.0Vdc
V(BR)CEO 100
Vdc
ICEO
100 µAdc
ICEX
1.0 µAdc
ICBO
1.0 µAdc
IEBO
100 µAdc
TO-39
(TO-205AD)
U-3
(TO-276AA)
T4-LDS-0011 Rev. 3 (101764)
Page 1 of 4
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