JAN2N6768 Datasheet, PDF (2/5 Pages) Microsemi Corporation – N-CHANNEL MOSFET

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: [phone] Fax: [phone]
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
V_GS = 10V, I_D = 14A
V_DS = 50V
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
I_D = 14A, V_GS = 10Vdc,
Gate drive impedance = 2.35Ω,
V_DD = 200Vdc
Diode Reverse Recovery Time di/dt ≤ 100A/µs, V_DD ≤ 30V, I_F = 14A
Symbol
Q_g(on)
Q_gs
Q_gd
Symbol
t_d(on)
t_r
t_d(off)
t_f
t_rr
Min.
Min.
Max.
Unit
110
18
nC
65
Max.
Unit
35
190
ns
170
130
1200
ns
T4-LDS-0043 Rev. 2 (101484)
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