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| JAN2N6768 Datasheet, PDF (1/5 Pages) Microsemi Corporation – N-CHANNEL MOSFET | |||
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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
DEVICES
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/543
2N6768 2N6768T1
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Drain â Source Voltage
VDS
400
Vdc
Gate â Source Voltage
Continuous Drain Current
Continuous Drain Current
Max. Power Dissipation
TC = +25°C
TC = +100°C
TC = +25°C
Drain to Source On State Resistance
VGS
± 20
Vdc
ID1
14
Adc
ID2
Ptl
Rds(on)
9.0
150 (1)
0.3 (2)
Adc
W
Ω
Operating & Storage Temperature
Top, Tstg -55 to +150
°C
Note: (1) Derated Linearly by 1.2 W/°C for TC > +25°C
(2) VGS = 10Vdc, ID = 9.0A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc
Gate-Source Voltage (Threshold)
VDS ⥠VGS, ID = 0.25mA
VDS ⥠VGS, ID = 0.25mA, Tj = +125°C
VDS ⥠VGS, ID = 0.25mA, Tj = -55°C
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
Drain Current
VGS = 0V, VDS = 320V
VGS = 0V, VDS = 400V, Tj = +125°C
VGS = 0V, VDS = 320V, Tj = +125°C
Static Drain-Source On-State Resistance
VGS = 10V, ID2 = 9A pulsed
VGS = 10V, ID1 = 4A pulsed
Tj = +125°C
VGS = 10V, ID2 = 9A pulsed
Symbol Min. Max.
V(BR)DSS 400
VGS(th)1
2.0
4.0
VGS(th)2
1.0
VGS(th)3
5.0
IGSS1
IGSS2
±100
±200
IDSS1
IDSS2
IDSS3
rDS(on)1
rDS(on)2
rDS(on)3
25
1.0
0.25
0.3
0.4
0.66
Diode Forward Voltage
VGS = 0V, ID1 = 14A pulsed
VSD
1.7
Unit
Vdc
Vdc
nAdc
µAdc
mAdc
mAdc
Ω
Ω
Ω
Vdc
T4-LDS-0043 Rev. 2 (101484)
2N6768
TO-204AA (TO-3)
2N6768T1 (TO-254AA)
Page 1 of 5
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