JAN2N1131 Datasheet, PDF (2/3 Pages) Microsemi Corporation – LOW POWER PNP SILICONTRANSISTOR

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: [phone] Fax: [phone]
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions
ON CHARACTERTICS ⁽³⁾
Forward-Current Transfer Ratio
I_C = 150mAdc, V_CE = 10Vdc
I_C = 5.0mAdc, V_CE = 10Vdc
Collector-Emitter Saturation Voltage
I_C = 150mAdc, I_B = 15mAdc
Symbol
2N1131, L
2N1132, L
2N1131, L
2N1132, L
h_FE
V_CE(sat)
Base-Emitter Saturation Voltage
I_C = 150mAdc, I_B = 15mAdc
V_BE(sat)
Min.
20
30
15
25
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Small-Signal Short-Circuit Forward-Current Transfer Ratio
I_C = 1.0mAdc, V_CE = 5.0Vdc, f = 1.0kHz
2N1131, L
2N1132, L
I_C = 5.0mAdc, V_CE = 10Vdc, f = 1.0kHz
2N1131, L
2N1132, L
Small-Signal Open-Circuit Output Admittance
I_C = 1.0mAdc, V_CE = 5.0Vdc, f = 1.0kHz
I_C = 5.0mAdc, V_CE = 10Vdc, f = 1.0kHz
Small-Signal Short-Circuit Input Impedance
I_C = 1.0mAdc, V_CE = 5.0Vdc, f = 1.0kHz
I_C = 5.0mAdc, V_CE = 10Vdc, f = 1.0kHz
Magnitude of Common Emitter Small-Signal Short Circuit
Forward-Current Transfer Ratio
I_C = 50mAdc, V_CE = 10Vdc, f = 20MHz
Output Capacitance
V_CB = 10Vdc, I_E = 0, 100 kHz ≤ f ≤ 1.0MHz
2N1131, L
2N1132, L
Iutput Capacitance
V_EB = 0.5Vdc, I_C = 0, 100 kHz ≤ f ≤ 1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time + Turn-Off Time
(See figure 2 of MIL-PRF-177)
(3) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%
T4-LDS-0187 Rev. 1 (101882)
Symbol
h_fe
h_ob
Min.
15
30
20
30
25
h_ib
|h_fe|
2.5
3.0
C_obo
C_ibo
Symbol
t_{on +} t_off
Min.
Max.
Unit
45
90
1.3
Vdc
1.5
Vdc
Max.
Unit
50
90
1.0
µmho
5.0
35
Ω
10
20
20
4.5
pF
80
pF
Max.
Unit
50
ηs
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