JAN2N1131 Datasheet, PDF (1/3 Pages) Microsemi Corporation – LOW POWER PNP SILICONTRANSISTOR

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: [phone] Fax: [phone]
LOW POWER PNP SILICONTRANSISTOR
Qualified per MIL-PRF-19500/177
DEVICES
2N1131
2N1131L
2N1132
2N1132L
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T_A = +25°C ⁽¹⁾
@ T_C = +25°C ⁽²⁾
Operating & Storage Junction Temperature Range
V_CEO
V_CBO
V_EBO
I_C
P_T
T_J, T_stg
40
50
5.0
600
0.6
2.0
-65 to +200
NOTES:
1/ Derate linearly 3.43mW/°C for T_A > +25°C
2/ Derate linearly 11.4mW/°C for T_C > +25°C
Unit
Vdc
Vdc
Vdc
mAdc
W
°C
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I_C = 10mAdc
Collector- Base Breakdown Voltage
I_C = 10µAdc
Emitter-Base Cutoff Current
V_EB = 5.0Vdc
Collector-Emitter Cutoff Current
V_CE = 50Vdc, R_BE ≤ 10 ohms
Symbol Min. Max.
V_(BR)CEO
40
V_(BR)CBO
50
I_EBO
100
I_CER
10
Unit
Vdc
Vdc
µAdc
mAdc
Collector-Base Cutoff Current
V_CB = 50Vdc
V_CB = 30Vdc
I_CBO
10 µAdc
1.0
TO-39
2N1131, 2N1132
TO-5
2N1131L, 2N1132L
T4-LDS-0187 Rev. 1 (101882)
Page 1 of 3