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HAL566 Datasheet, PDF (8/21 Pages) Micronas – Two-Wire Hall Effect Sensor Family
HAL55x, HAL56x
3.6. Electrical Characteristics at TJ = –40 °C to +170 °C , VDD = 4 V to 24 V, as not otherwise specified in Conditions
Typical Characteristics for TJ = 25 °C and VDD = 12 V
Symbol
Parameter
Pin No. Min.
Typ.
Max.
Unit
IDDlow
Low Current Consumption
1
2
3.3
5
mA
over Temperature Range
IDDhigh
High Current Consumption
1
over Temperature Range
12
14.3
17
mA
VDDZ
Overvoltage Protection
at Supply
1
–
28.5
32
V
fosc
Internal Oscillator
Chopper Frequency
–
90
145
–
kHz
fosc
Internal Oscillator Chopper Fre- –
75
145
–
kHz
quency over Temperature Range
ten(O)
Enable Time of Output after
1
Setting of VDD
20
30
µs
tr
Output Rise Time
1
0.4
1.6
µs
tf
Output Fall Time
1
0.4
1.6
µs
RthJSB
Thermal Resistance Junction
–
–
150
200
K/W
case
to Substrate Backside
SOT-89B
RthJA
Thermal Resistance Junction
–
–
150
200
K/W
case
to Soldering Point
TO-92UA
1) B > BON + 2 mT or B < BOFF – 2 mT for HAL 55x, B > BOFF + 2 mT or B < BON – 2 mT for HAL 56x
Conditions
IDD = 25 mA, TJ = 25 °C,
t = 20 ms
TJ = 25 °C
1)
VDD = 12 V, Rs = 30 Ω
VDD = 12 V, Rs = 30 Ω
Fiberglass Substrate
30 mm x 10 mm x 1.5mm,
pad size see Fig. 3–3
5.0
2.0
2.0
1.0
Fig. 3–3: Recommended pad size SOT-89B
Dimensions in mm
8
Micronas