HAL566 Datasheet, PDF (19/21 Pages) Micronas – Two-Wire Hall Effect Sensor Family

HAL55x, HAL56x
5.4. Ambient Temperature
Due to internal power dissipation, the temperature on
the silicon chip (junction temperature T_J) is higher than
the temperature outside the package (ambient tempera-
ture T_A).
T_J = T_A + ∆T
At static conditions and continuous operation, the follow-
ing equation is valid:
∆T = I_DD * V_DD * R_th
For all sensors, the junction temperature range T_J is
specified. The maximum ambient temperature T_Amax
can be calculated as:
T_Amax = T_Jmax – ∆T
For typical values, use the typical parameters. For worst
case calculation, use the max. parameters for I_DD and
R_th, and the max. value for V_DD from the application.
Due to the range of I_DDhigh, self-heating can be critical.
The junction temperature can be reduced with pulsed
supply voltage. For supply times (t_on) ranging from 30 µs
to 1 ms, the following equation can be used:
DT
+
I_DD
*
V_DD
*
R_th
*
t_off
t_on
)
t_on
5.5. EMC and ESD
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see Fig. 5–2). The series resistor
and the capacitor should be placed as closely as pos-
sible to the HAL sensor.
Applications with this arrangement passed the EMC
tests according to the product standards DIN 40839.
Note: The international standard ISO 7637 is similar to
the product standard DIN 40839.
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
R_V1
100 Ω
R_V2
30 Ω
1 V_DD
V_EMC
NC
4.7 nF
2 GND
Fig. 5–3: Recommended EMC test circuit
Micronas
19