HAL115 Datasheet, PDF (7/9 Pages) Micronas – Hall Effect Sensor IC

Typical supply current
versus ambient temperature
mA
HAL 115
14
12
I_DD
10
8
6
V_DD = 4.5 V
V_DD = 24 V
4
2
0
–50
0
50
100
150 °C
T_A
Typical supply current
versus supply voltage
mA
HAL 115
14
12
I_DD
10
8
6
T_A = 0 °C
T_A = 25 °C
T_A = 100 °C
4
2
0
0
see note 2
5 10 15 20 25 30 V
V_DD
MICRONAS INTERMETALL
HAL115
Application Note
Because of inherent reverse voltage protection, no
diode is needed at pin 1 for reverse voltages ranging
from 0 V to –15 V.
For electromagnetic immunity, it is recommended to ap-
ply a 330 pF minimum capacitor between V_DD (pin 1)
and Ground (pin 2).
For applications requiring robustness to conducted dis-
turbances (transients), a 220 Ω series resistor to pin 1
and a 4.7 nF capacitor between V_DD (pin 1) and Ground
(pin 2) is recommended.
Because of the I_DD peak at 4.1 V, the series resistor
should not be greater than 270 Ω.
The series resistor and the capacitor should be placed
as close as possible to the IC.
Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature T_J) is higher
than the temperature outside the package (ambient tem-
perature T_A).
T_J = T_A + ∆T
At static conditions, the following equations are valid:
– for SOT-89A:
– for TO-92UA:
∆T = I_DD * V_DD * R_thJSB
∆T = I_DD * V_DD * R_thJA
For typical values, use the typical parameters. For worst
case calculation, use the max. parameters for I_DD and
R_th, and the max. value for V_DD from the application.
Recommended Application Circuit for DC Fans
V_DD
L₁
3.3 k R₁
R₂
1
HAL115
3
3.3 k
2
2.2 µ/50 V
C₁
L₂
2.2 µ
/50 V
C₂
7