HAL115 Datasheet, PDF (4/9 Pages) Micronas – Hall Effect Sensor IC

HAL115
Absolute Maximum Ratings
Symbol
Parameter
V_DD
Supply Voltage
V_OH
Output Off Voltage
I_O
Continuous Output On Current
I_O
Peak Output On Current
–I_DD
Reverse Supply Current
T_s
Storage Temperature Range
T_J
Junction Temperature Range
1) _{as long as TJmax is not exceeded}
2) _{t < 2 ms}
Pin No.
1
3
3
3
1
Min.
–15
–
–
–
–65
–40
Max.
28¹⁾
28¹⁾
20
250²⁾
25¹⁾
150
150
Unit
V
V
mA
mA
mA
°C
°C
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the
“Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maxi-
mum ratings conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Symbol
V_DD
I_O
R_S
Parameter
Supply Voltage
Continuous Output On Current
Series Resistor
Pin No.
1
3
1
Min.
4.3
0
–
Typ.
–
–
–
Max.
Unit
24
V
12.5
mA
270
Ω
Electrical Characteristics at T_J = –40 °C to +100 °C, V_DD = 4.3 V to 24 V,
Typical Characteristics for T_J = 25 °C and V_DD = 12 V
Symbol
V_OL
V_OL
I_OH
Parameter
Output Voltage
Output Voltage over
Temperature Range
Output Leakage Current
Pin No.
3
3
Min.
–
–
3
–
Typ.
125
125
–
Max.
Unit
250
mV
400
mV
1
µA
I_OH
Output Leakage Current over
3
–
–
10
µA
Temperature Range
I_DD
Supply Current
I_DD
Supply Current over
Temperature Range
1
6.5
8.3
11
mA
1
5.5
8.3
12
mA
Test Conditions
I_O = 12.5 mA, T_J = 25 °C
I_O = 12.5 mA
B < B_OFF, T_J = 25 °C
V_DD ≤ 20 V
B < B_OFF
T_J = 25 °C, V_DD = 12 V
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