HAL115 Datasheet, PDF (5/9 Pages) Micronas – Hall Effect Sensor IC

HAL115
Electrical Characteristics, continued
Symbol
t_en(O)
t_r
t_f
R_thJSB
case
SOT-89A
R_thJA
case
TO-92UA
Parameter
Enable Time of Output after
Setting of V_DD
Output Rise Time
Pin No.
3
Min.
–
3
–
Output Fall Time
3
–
Thermal Resistance Junction to
–
Substrate Backside
Thermal Resistance
–
Junction to Soldering Point
Typ.
6
85
60
150
150
Max.
Unit
50
µs
400
ns
400
ns
200
K/W
200
K/W
Test Conditions
V_DD = 12 V
V_DD = 12 V, RL = 820 Ohm,
CL = 20 pF
V_DD = 12 V, RL = 820 Ohm,
CL = 20 pF
Fiberglass Substrate,
30 mm x 10 mm x 1,5mm
pad size see Fig. 6
Leads at ambient tempera-
ture at a distance of 2 mm
from case
Magnetic Characteristics at T_J = –40 °C to +100 °C, V_DD = 4.3 V to 24 V,
Typical Characteristics for T_J = 25 °C and V_DD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
On point B_ON
Off point B_OFF
Hysteresis B_HYS
Min.
–10.7
–12.5
1.8
Typ.
1.2
–1.2
2.4
Max. Unit
12.5
mT
10.7
mT
7
mT
Output Voltage
5.0
2.0
B_OFF min
0
B_HYS
B_ON max
Fig. 5: Definition of magnetic switching points and
hysteresis
2.0
1.0
Fig. 6: Recommended pad size SOT-89A
Dimensions in mm
MICRONAS INTERMETALL
5