HAL1821UA-A Datasheet, PDF (13/14 Pages) Micronas – Linear Hall-Effect Sensor Family in SOT89B Package

DATA SHEET
HAL 1821...HAL 1823
4. Application Notes
4.1. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature T_J) is higher
than the temperature outside the package (ambient
temperature T_A).
T_J = T_A + T
At static conditions and continuous operation, the fol-
lowing equation applies:
T = I_SUP * V_SUP * R_thjX
The X represents junction to air or to case.
For worst case calculation, use the max. parameters
for I_SUP and R_thjX, and the max. value for V_SUP from
the application.
The following example shows the result for junction to
air conditions. V_SUP = 5.5 V, R_thja = 250 K/W and I_DD =
10 mA the temperature difference T = 13.75 K.
The junction temperature T_J is specified. The maxi-
mum ambient temperature T_Amax can be calculated as:
T_Amax = T_Jmax T
4.2. EMC and ESD
The HAL182x is designed for a stabilized 5 V supply.
Interferences and disturbances conducted along the
12 V onboard system (product standard ISO 7637 part
1) are not relevant for these applications.
For applications with disturbances by capacitive or
inductive coupling on the supply line or radiated distur-
bances, the application circuit shown in Fig. 4–1 is rec-
ommended. Applications with this arrangement should
pass the EMC tests according to the product stan-
dards ISO 7637 part 3 (Electrical transient transmis-
sion by capacitive or inductive coupling) and part 4
(Radiated disturbances).
4.3. Application Circuit
For EMC protection, it is recommended to connect one
ceramic 10 nF capacitor between ground and output
voltage pin as well as 100 nF between supply and
ground.
V_DD
100 nF
HAL182x
OUT
10 nF
GND
Fig. 4–1: Recommended application circuit
Micronas
Aug. 2, 2013; DSH000162_001EN
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