MT48LC8M32B2 Datasheet, PDF (9/55 Pages) Micron Technology – SYNCHRONOUS DRAM

FUNCTIONAL DESCRIPTION
In general, this 256Mb SDRAM (2 Meg x 32 x 4 banks)
is a quad-bank DRAM that operates at 3.3V and in-
cludes a synchronous interface (all signals are regis-
tered on the positive edge of the clock signal, CLK).
Each of the 67,108,864-bit banks is organized as 4,096
rows by 512 columns by 32-bits.
Read and write accesses to the SDRAM are burst
oriented; accesses start at a selected location and con-
tinue for a programmed number of locations in a pro-
grammed sequence. Accesses begin with the registra-
tion of an ACTIVE command, which is then followed by
a READ or WRITE command. The address bits regis-
tered coincident with the ACTIVE command are used
to select the bank and row to be accessed (BA0 and BA1
select the bank, A0–A11 select the row). The address
bits (A0–A8) registered coincident with the READ or
WRITE command are used to select the starting col-
umn location for the burst access.
Prior to normal operation, the SDRAM must be ini-
tialized. The following sections provide detailed infor-
mation covering device initialization, register defini-
tion, command descriptions and device operation.
INITIALIZATION
SDRAMs must be powered up and initialized in a
predefined manner. Operational procedures other
than those specified may result in undefined opera-
tion. Once power is applied to VDD and VDDQ (simulta-
neously) and the clock is stable (stable clock is defined
as a signal cycling within timing constraints specified
for the clock pin), the SDRAM requires a 100µs delay
prior to issuing any command other than a COMMAND
INHIBIT or a NOP. Starting at some point during this
100µs period and continuing at least through the end
of this period, COMMAND INHIBIT or NOP commands
should be applied.
Once the 100µs delay has been satisfied with at
least one COMMAND INHIBIT or NOP command hav-
ing been applied, a PRECHARGE command should be
applied. All banks must then be precharged, thereby
placing the device in the all banks idle state.
Once in the idle state, two AUTO REFRESH cycles
must be performed. After the AUTO REFRESH cycles
are complete, the SDRAM is ready for Mode Register
programming. Because the Mode Register will power
up in an unknown state, it should be loaded prior to
applying any operational command.
PRELIMINARY
256Mb: x32
SDRAM
REGISTER DEFINITION
Mode Register
The Mode Register is used to define the specific
mode of operation of the SDRAM. This definition in-
cludes the selection of a burst length, a burst type, a
CAS latency, an operating mode and a write burst mode,
as shown in Figure 1. The Mode Register is programmed
via the LOAD MODE REGISTER command and will re-
tain the stored information until it is programmed again
or the device loses power.
Mode Register bits M0–M2 specify the burst length,
M3 specifies the type of burst (sequential or inter-
leaved), M4–M6 specify the CAS latency, M7 and M8
specify the operating mode, M9 specifies the write burst
mode, and M10, M11, BA0, and BA1 are reserved for
future use.
The Mode Register must be loaded when all banks
are idle, and the controller must wait the specified time
before initiating the subsequent operation. Violating
either of these requirements will result in unspecified
operation.
Burst Length
Read and write accesses to the SDRAM are burst
oriented, with the burst length being programmable,
as shown in Figure 1. The burst length determines the
maximum number of column locations that can be ac-
cessed for a given READ or WRITE command. Burst
lengths of 1, 2, 4, or 8 locations are available for both the
sequential and the interleaved burst types, and a full-
page burst is available for the sequential type. The
full-page burst is used in conjunction with the BURST
TERMINATE command to generate arbitrary burst
lengths.
Reserved states should not be used, as unknown
operation or incompatibility with future versions may
result.
When a READ or WRITE command is issued, a block
of columns equal to the burst length is effectively se-
lected. All accesses for that burst take place within this
block, meaning that the burst will wrap within the block
if a boundary is reached. The block is uniquely se-
lected by A1–A8 when the burst length is set to two; by
A2–A8 when the burst length is set to four; and by A3–
A8 when the burst length is set to eight. The remaining
(least significant) address bit(s) is (are) used to select
the starting location within the block. Full-page bursts
wrap within the page if the boundary is reached.
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256MbSDRAMx32.p65 – Rev. B; Pub. 03/04
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©2003 Micron Technology, Inc.