|
N25Q128A11E1240X Datasheet, PDF (82/83 Pages) Micron Technology – Micron Serial NOR Flash Memory | |||
|
◁ |
128Mb, Multiple I/O Serial Flash Memory
Revision History
Revision History
Rev. K â 06/2012
Rev. J â 02/2012
Rev. I â 12/2011
Rev. H â 08/2011
Rev. G â 07/2011
Rev. F â 02/2011
Rev. E â 01/2011
Rev. D â 10/2010
Rev. C â 2/2010
Rev. B â 05/2009
⢠Updated tSSE specification in AC Reset Conditions table
⢠Added deep power-down to AC Reset specifications.
⢠Updated note for Read ID Data Out table
⢠Updated SOP2-8 (208 mils body width) - Package Code: SE in Package Dimensions
⢠Updated value of tSSE in AC Characteristics and Operating Conditions
⢠Micron rebrand
⢠Updated order information
⢠Updated functionality
⢠Added the following packages: F6 = VDFPN8 6 x 5 mm (MLP 6 x 5) (RoHS compliant);
SE = SO8W (SO8 208 mils body width) (RoHS compliant)
⢠Changed the Typical specification for Erase to Suspend and Subsector
⢠Erase to Suspend in Operations Allowed / Disallowed During Device States
⢠Added tBE with VPP = VPPH and tSE with sector erase VPP = VPPH, TYP = 0.6s, MAX = 3s
to AC Characteristics
⢠Made miscellaneous text edits
⢠Corrected typographical error âiAâ to âuAâ for VOH in DC Characteristics
⢠Made the following specification changes in AC Characteristics: tW: changed MAX
from 15s to 8ms; tWNVCR: changed TYP from 1 to 0.2 and MAX from 15 to 3; tPP:
changed TYP from int(n/8) x 0.025 to int(n/8) x 0.015; tSSE: changed TYP from 150ms
to 0.2s and MAX from 500ms to 2s; tSE: changed TYP from 1s to 0.7s; tBE: changed
TYP from 256s to 170s and MAX from 770s to 250s
⢠Added the TBGA ballout and package information
PDF: 09005aef845665f6
n25q_128mb_1_8v_65nm.pdf - Rev. K 06/2012 EN
82
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
|
▷ |