N25Q032A11ESE40G Datasheet, PDF (73/82 Pages) Micron Technology – 32Mb, 1.8V, Multiple I/O Serial Flash Memory

32Mb, 1.8V, Multiple I/O Serial Flash Memory
AC Characteristics and Operating Conditions
Table 39: AC Characteristics and Operating Conditions (Continued)
Parameter
PAGE PROGRAM cycle time (256 bytes)
PAGE PROGRAM cycle time (n bytes)
PAGE PROGRAM cycle time, V_PP = V_PPH
(256 bytes)
PROGRAM OTP cycle time (64 bytes)
Subsector ERASE cycle time
Sector ERASE cycle time
Sector ERASE cycle time (with V_PP = V_PPH)
Bulk ERASE cycle time
Bulk ERASE cycle time (with V_PP = V_PPH)
S# to deep power-down
S# HIGH to standby
Symbol
t_PP
t_SSE
t_SE
t_BE
t_DP
t_RDP
Min
–
–
–
–
–
–
–
–
–
–
–
Typ²
0.5
int(n/8) ×
0.015⁸
0.4
0.2
0.25
0.7
0.6
30
25
–
–
Max
5
5
5
–
0.8
3
3
60
60
3
30
Unit
ms
ms
ms
ms
s
s
s
s
s
µs
µs
Notes
7
7
7
7
Notes:
1. ^tCH + ^tCL must add up to 1/^fC.
2. Typical values given for T_A = 25 °C.
3. Value guaranteed by characterization; not 100% tested.
4. Expressed as a slew-rate.
5. Only applicable as a constraint for a WRITE STATUS REGISTER command when STATUS
REGISTER WRITE is set to 1.
6. V_PPH should be kept at a valid level until the PROGRAM or ERASE operation has comple-
ted and its result (success or failure) is known.
7. When using the PAGE PROGRAM command to program consecutive bytes, optimized
timings are obtained with one sequence including all the bytes versus several sequences
of only a few bytes (1 < n < 256).
8. int(A) corresponds to the upper integer part of A. For example int(12/8) = 2, int(32/8) = 4
int(15.3) = 16.
PDF: 09005aef84566617
n25q_32mb_1_8v_65nm.pdf - Rev. E 6/12 EN
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