PC28F640P33BF60A Datasheet, PDF (67/88 Pages) Micron Technology – Numonyx® P33-65nm Flash Memory

P33-65nm SBC
Table 36: Burst Read Information
Offset
P=10Ah
Length
Description
(Optional flash features and commands)
Add.
(P+1D)h 1
(P+1E)h 1
(P+1F)h 1
(P+20)h 1
(P+21)h 1
(P+22)h 1
Page Mode Read capability
bits 0-7 = “n” such that 2ⁿ HEX value represents the number
of read-page bytes. See offset 28h for device word width to
determine page-mode data output width. 00h indicates no
read page buffer.
Number of synchronous mode read configuration fields that
follow. 00h indicates no burst capability.
Synchronous mode read capability configuration 1
Bits 3-7 = Reserved
bits 0-2 “n” such that 2ⁿ⁺¹ HEX value represents the
maximum number of continuous synchronous reads when
the device is configured for its maximum word width. A value
of 07h indicates that the device is capable of continuous
linear bursts that will output data until the internal burst
counter reaches the end of the device’s burstable address
space. This field’s 3-bit value can be written directly to the
Read Configuration Register bits 0-2 if the device is
configured for its maximum word width. See offset 28h for
word width to determine the burst data output width.
Synchronous mode read capability configuration 2
Synchronous mode read capability configuration 3
Synchronous mode read capability configuration 4
127:
128:
129:
12A:
12B:
12C:
Hex
Code
-04
-04
-01
-02
-03
-07
Value
16 Byte
4
4
8
16
Cont
Table 37: Partition and Erase Block Region Information
Offs e t⁽¹⁾
P = 10Ah
Description
Bottom Top
(Optional flash features and commands)
Number of device hardw are-partition regions w ithin the device.
x = 0: a single hardw are partition device (no fields follow ).
x specifies the number of device partition regions containing
(P+23)h (P+23)h one or more contiguous erase block regions.
See table below
Address
Len Bot
Top
1 12D: 12D:
Datasheet
67
Jul 2011
Order Number:208034-04