M25P16-VMN6PBA Datasheet, PDF (35/53 Pages) Micron Technology – Micron M25P16 Serial Flash Embedded Memory

Micron M25P16 Serial Flash Embedded Memory
Power-Up Timing and Write Inhibit Voltage Threshold Specifi-
cations
Power-Up Timing and Write Inhibit Voltage Threshold Specifications
Table 8: Power-Up Timing and V_WI Threshold
Symbol
Parameter
t_VSL
t_PUW
V_WI
V_CC(min) to S# LOW
Time delay to write instruction
Write Inhibit voltage
Note: 1. Parameters are characterized only.
Min
30
1.0
1.0
Max
–
10
2.1
Unit
μs
ms
V
If the time, t_VSL, has elapsed, after V_CC rises above V_CC(min), the device can be selected
for READ instructions even if the t_PUW delay has not yet fully elapsed.
V_PPH must be applied only when V_CC is stable and in the V_CCmin to V_CCmax voltage
range.
PDF: 09005aef8456656c
m25p16.pdf - Rev. H 1/14 EN
35
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