MT28F160C34 Datasheet, PDF (23/28 Pages) Micron Technology – FLASH MEMORY

ADVANCE
1 MEG x 16
3V ENHANCED+ BOOT BLOCK FLASH MEMORY
SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND
RECOMMENDED AC OPERATING CONDITIONS:
WE# (CE#)-CONTROLLED WRITES
(-40ºC £ T_A £ +85ºC; VCC = 3.3V ±5%)
AC CHARACTERISTICS
PARAMETER
WE# (CE#) HIGH pulse width
WE# (CE#) pulse width
Address setup time to WE# (CE#) HIGH
Address hold time from WE# (CE#) HIGH
Data setup time to WE# (CE#) HIGH
Data hold time from WE# (CE#) HIGH
CE# (WE#) setup time to WE# (CE#) LOW
CE# (WE#) hold time from WE# (CE#) HIGH
VPP setup time to WE# (CE#) HIGH
RP# HIGH to WE# (CE#) LOW delay
WRITE duration
Boot BLOCK ERASE duration
Parameter BLOCK ERASE duration
Main BLOCK ERASE duration
VPP hold time from status data valid
WE# (CE#) HIGH to busy status (SR7 = 0)
WP# HIGH setup time to WE# (CE#) HIGH
WP# HIGH hold time from status data valid
OE# HIGH hold time from WE# HIGH
SYMBOL
t_{WPH (}t_CPH)
t_{WP (}t_CP)
t_AS
t_AH
t_DS
t_DH
t_{CS (}t_WS)
t_{CH (}t_WH)
t_VPS
t_RS
t_WED1
t_WED2
t_WED3
t_WED4
t_VPH
t_WB
t_WHS
t_WHH
t_OHH
-9
MIN
30
70
70
0
50
0
0
0
200
150
6
0.5
0.5
1
0
200
0
0
30
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
s
s
s
ns
ns
ns
ns
ns
NOTES
1, 2
NOTE: 1. Polling status register before ^tWB is met may falsely indicate WRITE or ERASE completion.
2. ^tWB = 800ns (MAX).
1 Meg x 16 3V Enhanced+ Boot Block Flash Memory
MT28F160C34_3.p65 – Rev. 3, Pub. 8/01
23
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.