MT28F160C34 Datasheet, PDF (1/28 Pages) Micron Technology – FLASH MEMORY

ADVANCE^‡
1 MEG x 16
3V ENHANCED+ BOOT BLOCK FLASH MEMORY
FLASH MEMORY
MT28F160C34
FEATURES
• Thirty-nine erase blocks:
Eight 4K-word parameter blocks
Thirty-one 32K-word main memory blocks
• VCC, VCCQ and VPP voltages:
3.3V ±5% VCC
3.3V ±5% VCCQ
1.65V–3.465V and 12V VPP
• Address access times:
90ns at 3.3V ±5%
• Low power consumption:
Standby and deep power-down mode < 1µA
(typical ICC)
Automatic power saving feature (APS mode)
• Enhanced WRITE/ERASE SUSPEND (1µs typical)
• 128-bit OTP area for security purposes
• Industry-standard command set compatibility
• Software/hardware block protection
OPTIONS
• Timing
90ns access
• Boot Block Starting Address
Top (FFFFFh)
Bottom (00000h)
• Package
46-ball FBGA (6 x 8 ball grid)
• Temperature Range
Extended (-40ºC to +85ºC)
NUMBER
-9
T
B
FD
ET
Part Number Example:
MT28F160C34FD-9 TET
GENERAL DESCRIPTION
The MT28F160C34 is a nonvolatile, electrically block-
erasable (flash), programmable memory containing
16,777,216 bits organized as 1,048,576 words (16 bits).
The MT28F160C34 is manufactured on 0.22µm process
technology in a 46-ball FBGA package.
The embedded WORD WRITE and BLOCK ERASE
functions are fully automated by an on-chip write state
machine (WSM), which simplifies these operations and
relieves the system processor of secondary tasks. The
BALL ASSIGNMENT (Top View)
46-Ball FBGA
1
2
3
4
5
6
7
8
A
A13 A11
A8
VPP
WP# A19
A7
A4
B
A14 A10 WE# RP# A18 A17
A5
A2
C
A15 A12
A9
A6
A3
A1
D
A16 DQ14 DQ5 DQ11 DQ2 DQ8 CE#
A0
E
VCCQ DQ15 DQ6 DQ12 DQ3 DQ9 DQ0
VSS
F
VSS
DQ7 DQ13 DQ4
VCC DQ10 DQ1 OE#
(Ball Down)
NOTE: See page 3 for Ball Description Table.
See last page for mechanical drawing.
WSM status can be monitored by an on-chip status reg-
ister to determine the progress of program/erase tasks.
The device is equipped with 128 bits of one time
programmable (OTP) area. The soft protection feature
for blocks will mark them as read-only by configuring soft
protection registers with command sequences.
ARCHITECTURE
The MT28F160C34 flash contains eight 4K-word
parameter blocks and thirty-one 32K-word blocks.
Memory is organized by using a blocked architecture to
allow independent erasure of selected memory blocks.
Any address within a block address range selects that
block for the required READ, WRITE, or ERASE operation
(see Figure 1).
1 Meg x 16 3V Enhanced+ Boot Block Flash Memory
MT28F160C34_3.p65 – Rev. 3, Pub. 8/01
1
©2001, Micron Technology, Inc.
‡_{PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE}
BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.