MT48H4M16LFB4-8ITH Datasheet, PDF (20/62 Pages) Micron Technology – Mobile SDRAM MT48H4M16LF – 1 Meg x 16 x 4 banks

Figure 9: READ Command
CLK
CKE HIGH
CS#
64Mb: 4 Meg x 16 Mobile SDRAM
Operations
RAS#
CAS#
WE#
Address
A10
BA0, BA1
Column
Address
Enable auto precharge
Disable auto precharge
Bank
Address
Don’t Care
Figure 10: Consecutive READ Bursts
T0
T1
T2
T3
T4
T5
T6
CLK
Command
READ
NOP
Address
Bank,
Col n
DQ
CL = 2
NOP
NOP
READ
NOP
NOP
X = 1 cycle
Bank,
Col b
DOUT
n
DOUT
n+1
DOUT
n+2
DOUT
n+3
DOUT
b
T0
T1
T2
T3
T4
T5
T6
T7
CLK
Command
READ
NOP
NOP
NOP
READ
NOP
NOP
NOP
Address
Bank,
Col n
Bank,
Col b
X = 2 cycles
Note:
DQ
DOUT
n
DOUT
n+1
DOUT
n+2
DOUT
n+3
DOUT
b
CL = 3
Transitioning Data
Don’t Care
Each READ command may be issued to any bank. DQM is LOW.
PDF: 09005aef8237ed98/Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. C 10/07 EN
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