MT48H4M16LFB4-8ITH Datasheet, PDF (1/62 Pages) Micron Technology – Mobile SDRAM MT48H4M16LF – 1 Meg x 16 x 4 banks

Mobile SDRAM
MT48H4M16LF – 1 Meg x 16 x 4 banks
64Mb: 4 Meg x 16 Mobile SDRAM
Features
Features
• 1.70–1.95V
• Fully synchronous; all signals registered on positive
edge of system clock
• Internal pipelined operation; column address can be
changed every clock cycle
• Internal banks for hiding row access/precharge
• Programmable burst lengths: 1, 2, 4, 8, or continuous
page¹
• Auto precharge, includes concurrent auto precharge
• Self refresh mode
• 64ms, 4,096-cycle refresh
• LVTTL-compatible inputs and outputs
• Partial-array self refresh (PASR) power-saving mode
• On-die temperature-compensated self refresh
(TCSR)
• Deep power-down (DPD) mode
• Programmable output drive strength
• Operating temperature ranges
– Commercial (0°C to +70°C)
– Industrial (–40°C to +85°C)
Notes: 1. For continuous page burst, contact factory
for availability.
Options
• VDD/VDDQ
– 1.8V/1.8V
• Configurations
– 4 Meg x 16 (1 Meg x 16 x 4 banks)
• Plastic “green” package
– 54-ball VFBGA, 8mm x 8mm
• Timing (cycle time)
– 7.5ns @ CL = 3 (133 MHz)
– 8ns @ CL = 3 (125 MHz)
• Operating temperature
– Commercial (0°C to +70°C)
– Industrial (–40°C to +85°C)
• Die revision designator
Marking
H
4M16
B4
-75
-8
None
IT
:H
Figure 1: 54-Ball VFBGA Ball Assignment
(Top View)
1
2
3
4
5
6
7
8
9
A
VSS
DQ15 VSSQ
VDDQ DQ0
VDD
B
DQ14 DQ13 VDDQ
VSSQ
DQ2
DQ1
C
DQ12 DQ11 VSSQ
VDDQ DQ4
DQ3
D
DQ10 DQ9 VDDQ
VSSQ
DQ6
DQ5
E
DQ8
NC
VSS
VDD LDQM _DQ7
F
UDQM CLK
CKE
CAS# RAS#
WE#
G
NC
A11
A9
BA0
BA1
CS#
H
A8
A7
A6
A0
A1
A10
J
VSS
A5
A4
Top view
(Ball down)
A3
A2
VDD
Table 1: Address Table
Configuration
Refresh count
Row addressing
Bank addressing
Column addressing
4 Meg x 16
1 Meg x 16 x 4 banks
4K
4K (A0–A11)
4 (BA0, BA1)
256 (A0–A7)
Table 2:
Key Timing Parameters
CL = CAS (READ) latency
Speed
Grade
-75
-8
Clock Rate (MHz)
CL = 2 CL = 3
104
133
83
125
Access Time
CL = 2
CL = 3
8ns
6ns
8ns
6ns
PDF: 09005aef8237ed98/Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_1.fm - Rev. C 10/07 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2006 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.