MT36HTJ51272-P Datasheet, PDF (13/14 Pages) Micron Technology – DDR2 SDRAM Registered DIMM (RDIMM)

4GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
Serial Presence-Detect
Table 14: Serial Presence-Detect Matrix (continued)
“1”/“0”: serial data, “driven to HIGH”/“driven to LOW”
Byte
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47–61
62
63
64
65–71
72
73–90
91
92
93
94
95–98
99–127
Description
Entry (Version)
MT36HTJ51272(P)
Address and command setup time, ^tIS_b
Address and command hold time, ^tIH_b
Data/data mask input setup time, ^tDS_b
Data/data mask input hold time, ^tDH_b
WRITE recovery time, ^tWR
WRITE-to-READ command delay, ^tWTR
READ-to-PRECHARGE command delay, ^tRTP
-667
20
-53E
25
-40E
35
-667
27
-53E
37
-40E
47
-667/-53E
10
-40E
15
-667
17
-53E
22
-40E
27
3C
-667/-53E
1E
-40E
28
1E
Memory analysis probe
00
Extension for bytes 41 and 42
MIN active auto refresh time, ^tRC
(see note 1)
-667
06
-53E/-40E
06
-667/-53E
3C
-40E
37
MIN AUTO REFRESH-to-ACTIVE/
7F
AUTO REFRESH command period, ^tRFC
SDRAM device MAX cycle time, ^tCKMAX
80
SDRAM device MAX DQS–DQ skew time, ^tDQSQ
-667
18
-53E
1E
-40E
23
SDRAM device MAX read data hold skew factor, ^tQHS
-667
22
-53E
28
-40E
2D
PLL relock time
15µs
0F
Optional features, not supported
00
SPD revision
Release 1.2
12
Checksum for bytes 0–62
ECC / ECC and Parity
-667
-53E
-40E
1E/22
C9/CD
30/34
Manufacturer’s JEDEC ID code
MICRON
2C
Manufacturer’s JEDEC ID code
(continued)
FF
Manufacturing location
01–12
01–0C
Module part number (ASCII)
Variable data
PCB identification code
1–9
01–09
Identification code (continued)
0
00
Year of manufacture in BCD
Variable data
Week of manufacture in BCD
Variable data
Module serial number
Variable data
Manufacturer-specific data (RSVD)
FF
Notes: 1. The ^tRC SPD values shown are JEDEC DDR2 device specification values. The actual Micron
DDR2 device specification is ^tRC = 55ns for all speed grades.
PDF: 09005aef822553c2/Source: 09005aef822553af
HT36HTJ51272.fm - Rev. B 7/06 EN
13
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©2003 Micron Technology, Inc. All rights reserved.