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PC28F128J3F75A Datasheet, PDF (1/66 Pages) Micron Technology – Numonyx® Embedded Flash Memory (J3 65nm) Single Bit per Cell (SBC) | |||
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Numonyx® Embedded Flash Memory (J3 65
nm) Single Bit per Cell (SBC)
32, 64, and 128 Mbit
Datasheet
Product Features
 Architecture
â Symmetrical 128-KB blocks
â 128 Mbit (128 blocks)
â 64 Mbit (64 blocks)
â 32 Mbit (32 blocks)
â Blank Check to verify an erased block
 Performance
â Initial Access Speed: 75ns
â 25 ns 8-word Asynchronous page-mode
reads
â 256-Word write buffer for x16 mode, 256-
Byte write buffer for x8 mode;
1.41 µs per Byte Effective programming
time
 System Voltage
â VCC = 2.7 V to 3.6 V
â VCCQ = 2.7 V to 3.6 V
 Packaging
â 56-Lead TSOP
â 64-Ball Easy BGA package
 Security
â Enhanced security options for code
protection
â Absolute protection with VPEN = Vss
â Individual block locking
â Block erase/program lockout during power
transitions
â Password Access feature
â One-Time Programmable Register:
64 OTP bits, programmed with unique
information by Numonyx
64 OTP bits, available for customer
programming
 Software
â Program and erase suspend support
â Numonyx® Flash Data Integrator (FDI)
â Common Flash Interface (CFI) Compatible
â Scalable Command Set
 Quality and Reliability
â Operating temperature:
-40 °C to +85 °C
â 100K Minimum erase cycles per block
â 65 nm Flash Technology
â JESD47E Compliant
208032-03
Jan 2011
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2010 Micron Technology, Inc. All rights reserved.
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