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MT29F2G16AADWPDTR Datasheet, PDF (1/88 Pages) Micron Technology – 2Gb x8, x16: NAND Flash Memory | |||
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Micron Confidential and Proprietary
2Gb x8, x16: NAND Flash Memory
Features
NAND Flash Memory
MT29F2G08AAD, MT29F2G16AAD,
MT29F2G08ABD, MT29F2G16ABD
Features
⢠Open NAND Flash Interface (ONFI) 1.0-compliant
⢠Single-level cell (SLC) technology
⢠Organization
â Page size:
⢠x8: 2,112 bytes (2,048 + 64 bytes)
⢠x16: 1,056 words (1,024 + 32 words)
â Block size: 64 pages (128K + 4K bytes)
â Device size: 2Gb: 2,048 blocks
⢠READ performance
â Random READ: 25µs
â Sequential READ: 25ns (3.3V)
â Sequential READ: 35ns (1.8V)
⢠WRITE performance
â PROGRAM PAGE: 220µs (TYP, 3.3V)
â PROGRAM PAGE: 300µs (TYP, 1.8V)
â BLOCK ERASE: 500µs (TYP)
⢠Data retention: 10 years
⢠Endurance: 100,000 PROGRAM/ERASE cycles
⢠First block (block address 00h) guaranteed to be
valid with ECC when shipped from factory1
⢠Industry-standard basic NAND Flash command set
⢠Advanced command set:
â PROGRAM PAGE CACHE MODE
â PAGE READ CACHE MODE
â One-time programmable (OTP) commands
â BLOCK LOCK (1.8V only)
â PROGRAMMABLE DRIVE STRENGTH
â READ UNIQUE ID
⢠Operation status byte provides a software method of
detecting:
â Operation completion
â Pass/fail condition
â Write-protect status
⢠Ready/busy# (R/B#) signal provides a hardware
method of detecting operation completion
⢠WP# signal: write protect entire device
⢠RESET required as first command after power-up
⢠INTERNAL DATA MOVE operations supported
⢠Alternate method of device initialization
(Nand_Init) after power up4 (Contact Factory)
Figure 1: 63-Ball VFBGA
Options
⢠Density2: 2Gb (single die)
⢠Device width: x8, x16
⢠Configuration:
# of die # of CE# # of R/B# I/O
1
1
1
Common
⢠VCC: 2.7â3.6V
⢠VCC: 1.65â1.95V
⢠Package
â 48-pin TSOP type I CPL3 (lead-free plating, 3.3V
only)
â 63-ball VFBGA (lead-free, 1.8V only)
⢠Operating temperature:
â Commercial (0°C to +70°C)
â Extended (â40°C to +85°C)
1. See âError Managementâ on page 61.
2. For part numbering and markings, see
Figure 2 on page 2 and Figure 3 on page 3.
3. CPL = center parting line
4. Available only in 1.8V VFBGA package.
PDF: 09005aef82784784 / Source: 09005aef82784840
NDA_2gb_nand_m59a__1.fm - Rev. A 8/08 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2007 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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