TC429 Datasheet, PDF (9/14 Pages) TelCom Semiconductor, Inc – 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER

TC429
TYPICAL CHARACTERISTICS (CONTINUED)
Voltage Transfer Characteristics
20
T_A = +25°C
15
HYSTERESIS
≈310mV
300mV
10
200mV
5
High Output Voltage vs. Current
Low Output Voltage vs. Current
400
T_A = +25°C
400
T_A = +25°C
300
300
V_DD = 5V
200
10V
15V
200
100
18V
100
V_DD = 5V
10V _15V
18V
0 _{0.25 0.50 0.75 1 1.25 1.50 1.75 2}
INPUT VOLTAGE (V)
0
20 40 60
80 100
0
CURRENT SOURCED (mA)
20 40 60 80 100
CURRENT SUNK (mA)
Thermal Derating Curves
1600
1400
1200
1000
8-Pin DIP
8-Pin CERDIP
800
600
400
200
0
0 10 20 30 40 50 60 70 80 90 100 110 120
AMBIENT TEMPERATURE (°C)
 2002 Microchip Technology Inc.
DS21416B-page 9