TC429 Datasheet, PDF(2/14 Page) TelCom Semiconductor, Inc – 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER

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TC429 Datasheet, PDF (2/14 Pages) TelCom Semiconductor, Inc – 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER

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TC429

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings*

Supply Voltage .....................................................+20V

Input Voltage, Any Terminal

...................................VDD + 0.3V to GND â 0.3V

Power Dissipation (TA â¤ 70Â°C)

PDIP .........................................................730mW

CERDIP....................................................800mW

Derating Factor

PDIP .................................5.6mW/Â°C Above 36Â°C

CERDIP................................................6.4mW/Â°C

Operating Temperature Range

C Version......................................... 0Â°C to +70Â°C

E Version ......................................-40Â°C to +85Â°C

M Version ...................................-55Â°C to +125Â°C

Storage Temperature Range ..............-65Â°C to +150Â°C

*Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These

are stress ratings only and functional operation of the device

at these or any other conditions above those indicated in the

operation sections of the specifications is not implied.

Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability.

TC429 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: TA = +25Â°C with 7V â¤ VDD â¤ 18V, unless otherwise noted.

Symbol

Parameter

Min

Typ

Max

Input

VIH

VIL

IIN

Output

VOH

VOL

Logic 1, High Input Voltage

Logic 0, Low Input Voltage

Input Current

High Output Voltage

Low Output Voltage

Output Resistance

2.4

1.8

1.3

-10

VDD â 0.025

1.8

0.8

0.025

2.5

1.5

2.5

IPK

Peak Output Current

Switching Time (Note 1)

Rise Time

Fall Time

tD1

Delay Time

tD2

Delay Time

Power Supply

Power Supply Current

Note 1: Switching times ensured by design.

3.5

0.3

0.5

Units

Test Conditions

ÂµA 0V â¤ VIN â¤ VDD

â¦

VIN = 0.8V,

IOUT = 10mA, VDD = 18V

â¦

VIN = 2.4V,

IOUT = 10mA, VDD = 18V

VDD = 18V (Figure 3-4)

nsec

Figure 3-1, CL = 2500pF

Figure 3-1

mA VIN = 3V

VIN = 0V

DS21416B-page 2

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