TC429 Datasheet, PDF (8/14 Pages) TelCom Semiconductor, Inc – 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER

TC429
4.0 TYPICAL CHARACTERISTICS
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Rise/Fall Times vs. Supply Voltage
60
T
°C
L
50
Rise/Fall Times vs. Temperature
60
50
40
40
t_F
30
t_F
30
t_R
Rise/Fall Times vs. Capacitive Load
100
T
V
t_F
t_R
10
20
t_R
20
10
10
1
5
10
15
20
-50 -25 0 25 50 75 100 125 150 100
1K
10K
SUPPLY VOLTAGE (V)
°C)
CAPACITIVE LOAD (pF)
Supply Current vs. Capacitive Load
70
T_A
°C
60 V
50
Delay Times vs. Temperature
90
L
V_DD = +15V
80
Delay Times vs. Supply Voltage
140
T
°C
C = 2500pF
120
40
70
100
30
20
10
0
10
t_D2
400kHz
60
80
200kHz
50
t_D1
60
20kHz
40
40
100
1K
10K
-50 -25 0 25 50 75 100 125 150
5
CAPACITIVE LOAD (pF)
°C)
t_D2
t_D1
10
15
20
SUPPLY VOLTAGE (V)
Supply Current vs. Frequency
50
T
°C
C_L
10V
40
15V
30
V_DD = 18V
20
Supply Current vs. Supply Voltage
4
T = +25°C
R_L = ∞
Supply Current vs. Temperature
V = +18°C
4
R_L = ∞
2
3
10
5V
0
2
1
10
100
1K 0
4
8
12
16
20
-75 -50 -25 0 25 50 75 100 125 150
FREQUENCY (kHz)
SUPPLY VOLTAGE (V)
°C)
DS21416B-page 8
 2002 Microchip Technology Inc.