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TC4421 Datasheet, PDF (8/14 Pages) TelCom Semiconductor, Inc – 9A HIGH-SPEED MOSFET DRIVERS
TC4421/TC4422
TYPICAL CHARACTERISTICS (CONTINUED)
Propagation Delay vs. Input Amplitude
120
110
VDD = 10V
100
CLOAD = 10,000pF
90
80
70
60
50
tD2
40
30
tD1
20
10
0
1 2 3 4 5 6 7 8 9 10
INPUT (V)
Propagation Delay vs. Temperature
50
VDD = 18V
45 CLOAD = 10,000pF
VIN = 5V
40
35
tD2
tD1
30
25
20
-60 -40 -20 0 20 40 60 80 100 120
TA (°C)
Crossover Energy vs. Supply Voltage
10-6
Quiescent Supply Current vs. Temperature
103
VDD = 18V
10-7
10-8
4 6 8 10 12 14 16 18
VDD (V)
NOTE: The values on this graph represent the loss seen
by the driver during a complete cycle. For the loss
in a single transition, divide the stated value by 2.
High-State Output Resistance
vs. Supply Voltage
6
5.5
5
4.5
TJ = 150°C
4
3.5
3
2.5
2
1.5
1
0.5
4
TJ = 25°C
6
8
10 12 14 16 18
VDD (V)
INPUT = 1
102
INPUT = 0
-60 -40 -20 0 20 40 60 80 100 120
TJ (°C)
Low-State Output Resistance
vs. Supply Voltage
6
5.5
5
4.5
4
3.5
3
TJ = 150°C
2.5
2
1.5
1
0.5
4
TJ = 25°C
6
8 10 12 14 16 18
VDD (V)
DS21420B-page 8
 2002 Microchip Technology Inc.