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TC4421 Datasheet, PDF (2/14 Pages) TelCom Semiconductor, Inc – 9A HIGH-SPEED MOSFET DRIVERS
TC4421/TC4422
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Supply Voltage .....................................................+20V
Input Voltage .................... (VDD + 0.3V) to (GND – 5V)
Input Current (VIN > VDD) ....................................50mA
Package Power Dissipation (TA ≤ 70°C)
PDIP .........................................................730mW
CERDIP....................................................800mW
5-Pin TO-220................................................1.6W
Package Power Dissipation (TA ≤ 25°C)
5-Pin TO-220 (With Heatsink) ....................12.5W
Derating Factors (To Ambient)
PDIP ........................................................8mW/°C
CERDIP................................................6.4mW/°C
5-Pin TO-220.........................................12mW/°C
Thermal Impedances (To Case)
5-Pin TO-220 RθJ-C ..................................10°C/W
Operating Temperature Range (Ambient)
C Version......................................... 0°C to +70°C
E Version ......................................-40°C to +85°C
M Version ...................................-55°C to +125°C
Storage Temperature Range ..............-65°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC4421/TC4422 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: TA = +25°C, with 4.5V ≤ VDD ≤ 18V, unless otherwise noted.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
Input
VIH
VIL
IIN
Output
VOH
VOL
RO
RO
IPK
IDC
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Continuous Output Current
IREV
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 1)
tR
tF
tD1
tD2
Note
Rise Time
Fall Time
Delay Time
Delay Time
1: Switching times ensured by design.
2.4
1.8
—
—
1.3
0.8
-10
—
10
VDD – 0.025 —
—
—
—
1.4
—
0.9
—
9
2
—
—
>1.5
—
0.025
—
1.7
—
—
—
V
V
µA 0V ≤ VIN ≤ VDD
V Figure 3-1
V Figure 3-1
Ω IOUT = 10mA, VDD = 18V
Ω IOUT = 10mA, VDD = 18V
A VDD = 18V
A 10V ≤ VDD ≤ 18V, TA = +25°C
(TC4421/TC4422 CAT only)
A Duty cycle ≤ 2%, t ≤ 300µsec
—
60
75
nsec Figure 3-1, CL = 10,000pF
—
60
75
nsec Figure 3-1, CL = 10,000pF
—
30
60
nsec Figure 3-1
—
33
60
nsec Figure 3-1
DS21420B-page 2
 2002 Microchip Technology Inc.