TC4421 Datasheet, PDF (6/14 Pages) TelCom Semiconductor, Inc – 9A HIGH-SPEED MOSFET DRIVERS

TC4421/TC4422
4.0 TYPICAL CHARACTERISTICS
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Rise Time vs. Supply Voltage
220
200
180
22,000pF
160
140
120
10,000pF
100
80
4700pF
60
40
1000pF
20
0
4
6
8 10 12 14 16 18
V_DD (V)
Fall Time vs. Supply Voltage
180
160
140
22,000pF
120
100
80
10,000pF
60
4700pF
40
20
1000pF
0
4
6
8
10 12 14 16 18
V_DD (V)
Rise TIme vs. Capacitive Load
300
5V
250
10V
200
150
15V
100
50
0
100
1000
10,000
100,000
C_LOAD (pF)
Fall TIme vs. Capacitive Load
300
5V
250
10V
200
150
15V
100
50
0
100
1000
10,000
C_LOAD (pF)
100,000
Rise and Fall Times vs. Temperature
90
C_LOAD = 10,000pF
80
V_DD = 15V
70
60
t_RISE
50
40
t_FALL
30
-40
0
40
80
120
T_A (°C)
Propagation Delay vs. Supply Voltage
50
C_LOAD = 1000pF
45
40
35
t_D2
t_D1
30
25
4
6
8 10 12 14 16 18
V_DD (V)
DS21420B-page 6
 2002 Microchip Technology Inc.