MCP40D17 Datasheet, PDF (7/66 Pages) Microchip Technology – 7-Bit Single I2C™ (with Command Code) Digital POT with Volatile Memory in SC70

MCP40D17/18/19
AC/DC CHARACTERISTICS (CONTINUED)
DC Characteristics
Standard Operating Conditions (unless otherwise specified)
Operating Temperature
–40°C ≤ T_A ≤ +125°C (extended)
All parameters apply across the specified operating ranges unless noted.
V_DD = +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
Typical specifications represent values for V_DD = 5.5V, T_A = +25°C.
Parameters
Sym
Min
Typ Max Units
Conditions
Rheostat Integral
Non-linearity
MCP40D18
(Note 3)
MCP40D17 and
MCP40D19
devices only
(Note 3)
R-INL
-2.0
±0.5 +2.0
-5.0
+3.5 +5.0
See Section 2.0
-2.0
±0.5 +2.0
-4.0
+2.5 +4.0
See Section 2.0
-1.125 ±0.5 +1.125
-1.5
+1
+1.5
See Section 2.0
LSb 5 kΩ
LSb
LSb
5.5V, I_W = 900 µA
2.7V, I_W = 430 µA (Note 6)
1.8V (Note 6)
LSb 10 kΩ 5.5V, I_W = 450 µA
LSb
2.7V, I_W = 215 µA (Note 6)
LSb
1.8V (Note 6)
LSb 50 kΩ 5.5V, I_W = 90 µA
LSb
2.7V, I_W = 43 µA (Note 6)
LSb
1.8V (Note 6)
-0.8
±0.5 +0.8
-1.125 +0.25 +1.125
See Section 2.0
LSb 100 kΩ 5.5V, I_W = 45 µA
LSb
2.7V, I_W = 21.5 µA (Note 6)
LSb
1.8V (Note 6)
Rheostat
Differential
Non-linearity
MCP40D18
(Note 3)
MCP40D17 and
MCP40D19
devices only
(Note 3)
R-DNL
-0.5 ±0.25 +0.5
-0.75 +0.5 +0.75
See Section 2.0
-0.5 ±0.25 +0.5
-0.75 +0.5 +0.75
See Section 2.0
-0.375 ±0.25 +0.375
-0.375 ±0.25 +0.375
See Section 2.0
LSb 5 kΩ
LSb
LSb
5.5V, I_W = 900 mA
2.7V, I_W = 430 µA (Note 6)
1.8V (Note 6)
LSb 10 kΩ 5.5V, I_W = 450 µA
LSb
2.7V, I_W = 215 µA (Note 6)
LSb
1.8V (Note 6)
LSb 50 kΩ 5.5V, I_W = 90 µA
LSb
2.7V, I_W = 43 µA (Note 6)
LSb
1.8V (Note 6)
-0.375 ±0.25 +0.375
-0.375 ±0.25 +0.375
See Section 2.0
LSb 100 kΩ 5.5V, I_W = 45 µA
LSb
2.7V, I_W = 21.5 µA (Note 6)
LSb
1.8V (Note 6)
Capacitance (P_A)
C_AW
—
75
—
pF f =1 MHz, Code = Full Scale
Capacitance (P_w)
C_W
—
120
—
pF f =1 MHz, Code = Full Scale
Capacitance (P_B)
C_BW
—
75
—
pF f =1 MHz, Code = Full Scale
Note 1: Resistance is defined as the resistance between terminal A to terminal B.
2: INL and DNL are measured at V_W with V_A = V_DD and V_B = V_SS.
3: MCP40D18 device only, includes V_WZSE and V_WFSE.
4: Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
5: This specification by design.
6: Non-linearity is affected by wiper resistance (R_W), which changes significantly over voltage and
temperature.
7: POR/BOR is not rate dependent.
8: Supply current is independent of current through the resistor network
© 2009 Microchip Technology Inc.
DS22152B-page 7