TC1313 Datasheet, PDF (6/28 Pages) Microchip Technology – 500 mA Synchronous Buck Regulator, + 300 mA LDO

TC1313
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: V_IN1 = V_IN2 = SHDN1,2 = 3.6V, C_OUT1 = C_IN = 4.7 µF, C_OUT2 = 1µF, L = 4.7 µH, V_OUT1 (ADJ) = 1.8V,
I_OUT1 = 100 ma, I_OUT2 = 0.1 mA T_A = +25°C. Boldface specifications apply over the T_A range of -40°C to +85°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Wake-Up Time
t_WK
(From SHDN2 mode), (V_OUT2)
—
31
100
µs
I_OUT1 = I_OUT2 = 50 mA
Settling Time
t_S
(From SHDN2 mode), (V_OUT2)
—
100
—
µs
I_OUT1 = I_OUT2 = 50 mA
Note 1:
2:
3:
4:
The Minimum V_IN has to meet two conditions: V_IN ≥ 2.7V and V_IN ≥ V_RX + V_DROPOUT, V_RX = V_R1 or V_R2.
V_RX is the regulator output voltage setting.
TCV_OUT2 = ((V_OUT2max – V_OUT2min) * 10⁶)/(V_OUT2 * D_T).
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current.
5: Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its
nominal value measured at a 1V differential.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air. (i.e. T_A, T_J, θ_JA). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown.
7: The integrated MOSFET switches have an integral diode from the L_X pin to V_IN, and from L_X to P_GND. In cases where
these diodes are forward-biased, the package power dissipation limits must be adhered to. Thermal protection is not
able to limit the junction temperature for these cases.
8: V_IN1 and V_IN2 are supplied by the same input source.
TEMPERATURE SPECIFICATIONS
Electrical Specifications: Unless otherwise indicated, all limits are specified for: V_IN = +2.7V to +5.5V
Parameters
Sym
Min
Typ
Max Units
Conditions
Temperature Ranges
Operating Junction Temperature Range
T_J
-40
—
+125 °C Steady state
Storage Temperature Range
T_A
-65
—
+150 °C
Maximum Junction Temperature
T_J
—
—
+150 °C Transient
Thermal Package Resistances
Thermal Resistance, 10L-DFN
θ_JA
—
41
—
°C/W Typical 4-layer board with Internal
Ground Plane and 2 Vias in Thermal
Pad
Thermal Resistance, 10L-MSOP
θ_JA
—
113
—
°C/W Typical 4-layer board with Internal
Ground Plane
DS21974A-page 6
© 2005 Microchip Technology Inc.