TC1313 Datasheet, PDF (4/28 Pages) Microchip Technology – 500 mA Synchronous Buck Regulator, + 300 mA LDO

TC1313
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V_IN - A_GND ......................................................................6.0V
All Other I/O .............................. (A_GND - 0.3V) to (V_IN + 0.3V)
L_X to P_GND.............................................. -0.3V to (V_IN + 0.3V)
P_GND to A_GND................................................... -0.3V to +0.3V
Output Short Circuit Current ................................. Continuous
Power Dissipation (Note 7) ..........................Internally Limited
Storage temperature .....................................-65°C to +150°C
Ambient Temp. with Power Applied.................-40°C to +85°C
Operating Junction Temperature...................-40°C to +125°C
ESD protection on all pins (HBM) ....................................... 3 kV
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Characteristics: V_IN1 = V_IN2 = SHDN1,2 = 3.6V, C_OUT1 = C_IN = 4.7 µF, C_OUT2 = 1µF, L = 4.7 µH, V_OUT1 (ADJ) = 1.8V,
I_OUT1 = 100 ma, I_OUT2 = 0.1 mA T_A = +25°C. Boldface specifications apply over the T_A range of -40°C to +85°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input/Output Characteristics
Input Voltage
V_IN
2.7
—
5.5
Maximum Output Current
I_{OUT1_MAX}
500
—
—
Maximum Output Current
I_{OUT2_MAX}
300
—
—
Shutdown Current
I_{IN_SHDN}
—
0.05
1
Combined V_IN1 and V_IN2 Current
Operating I_Q
I_Q
—
57
100
Synchronous Buck I_Q
—
38
—
LDO I_Q
—
44
—
Shutdown/UVLO/Thermal Shutdown Characteristics
V
Note 1, Note 2, Note 8
mA Note 1
mA Note 1
µA SHDN1 = SHDN2 = GND
µA
SHDN1 = SHDN2 = V_IN2
I_OUT1 = 0 mA, I_OUT2 = 0 mA
µA
SHDN1 = V_IN, SHDN2 = GND
µA
SHDN1 = GND, SHDN2 = V_IN2
SHDN1,SHDN2,
Logic Input Voltage Low
V_IL
—
—
15
%V_IN V_IN1 = V_IN2 = 2.7V to 5.5V
SHDN1,SHDN2,
Logic Input Voltage High
V_IH
45
—
—
%V_IN V_IN1 = V_IN2 = 2.7V to 5.5V
SHDN1,SHDN2,
Input Leakage Current
I_IN
-1.0
±0.01
1.0
µA
V_IN1 = V_IN2 = 2.7V to 5.5V
SHDNX = GND
SHDNY = V_IN
Thermal Shutdown
T_SHD
—
165
—
°C Note 6, Note 7
Thermal Shutdown Hysteresis
T_SHD-HYS
—
10
—
°C
Undervoltage Lockout
(V_OUT1 and V_OUT2)
UVLO
2.4
2.55
2.7
V
V_IN1 Falling
Undervoltage Lockout Hysteresis UVLO-_HYS
—
200
—
mV
Note 1:
2:
3:
4:
The Minimum V_IN has to meet two conditions: V_IN ≥ 2.7V and V_IN ≥ V_RX + V_DROPOUT, V_RX = V_R1 or V_R2.
V_RX is the regulator output voltage setting.
TCV_OUT2 = ((V_OUT2max – V_OUT2min) * 10⁶)/(V_OUT2 * D_T).
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current.
5: Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its
nominal value measured at a 1V differential.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air. (i.e. T_A, T_J, θ_JA). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown.
7: The integrated MOSFET switches have an integral diode from the L_X pin to V_IN, and from L_X to P_GND. In cases where
these diodes are forward-biased, the package power dissipation limits must be adhered to. Thermal protection is not
able to limit the junction temperature for these cases.
8: V_IN1 and V_IN2 are supplied by the same input source.
DS21974A-page 4
© 2005 Microchip Technology Inc.